| Authors |
Gurin Sergey Aleksandrovich, candidate of technical sciences, deputy head of department, CJSC «Medtekhnika» (9 Srednyaya street, Penza, Russia), E-mail: teslananoel@rambler.ru
Pecherskaya Ekaterina Anatolevna, doctor of technical sciences, associate professor, head of sub-department of information and measuring equipment and metrology, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: pea1@list.ru
Zinchenko Timur Olegovich, postgraduate student, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: scar0243@gmail.com
Fimin Andrey Vladimirovich, postgraduate student, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: mr.l0tus@mail.ru
Nikolaev Kirill Olegovich, postgraduate student, Penza State University (40 Krasnaya street, Penza, Russia), E-mail:nikolaev_kirill10@mail.ru
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| Abstract |
Background. Progress in the fields of microelectronics and MEMS technologies, the extensive use of instrumentation, ensured the development and manufacture of sensors and systems for various purposes, level of complexity, principles of operation, and energy and signal conversion. MEMS today is the most complex physical devices, representing a set of interacting elements integrated into a single system. The use of sensor equipment with the use of piezoelectric strain-resistant modules allows you to register fast-variable and static pressure. The aim of the work is the development of structures, selection of materials and description of technological processes for the manufacture of sensitive elements of pressure sensors.
Materials and methods. One of the proposed options for the dynamic pressure sensor element contains films based on polar dielectrics AlN and ZnO, which under normal conditions crystallize into a hexagonal lattice of the wurtzite type, or lead titanate zirconate with piezoelectric properties, which has a perovskite structure. Another sensitive element of the sensor and the rapidly varying and static pressure contains a silicon state with formed platinum tracks, integrated piezoelectric capacitive structures with semiconductor strain gages.
Results. Two versions of the sensitive element of the quick-variable and static pressure sensor are proposed: a) a siliconbased structure with formed platinum tracks integrated with piezoelectric capacitive structures with semiconductor strain gauges; b) a cruciform beam-based structure, which is located along the perimeter of the support ring with a formed bridge circuit of metal-film strain gauges and piezoelectric capacitive structures based on PZT.
Conclusions. The choice of materials is substantiated and the technological regimes of the formation of heterogeneous structures of sensitive elements of sensors of quick-variable and static pressure are described. The presented structures allow to register a wide range of both static and dynamically changing pressure values with small deviations from the actual values. The simulation results confirm the possibility of making prototypes of sensitive elements.
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